Product Summary

The SI7716ADN-T1-GE3 is an N-Channel 30-V (D-S) MOSFET.

Parametrics

SI7716ADN-T1-GE3 absolute maximum ratings: : (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: ± 20V; (3)Continuous Drain Current (TJ = 150 ℃)TC = 25 ℃ ID: 16A; (4)Pulsed Drain Current IDM: 32A; (5)Avalanche Current L = 0.1 mH IAS: 15A; (6)Avalanche Energy EAS: 11.25 mJ; (7)Continuous Source-Drain Diode Current TC = 25 ℃ IS: 16 A; (8)Maximum Power Dissipation TC = 25 ℃ PD: 27.7 W; (9)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to 150 ℃; (10)Soldering Recommendations (Peak Temperature): 260℃.

Features

SI7716ADN-T1-GE3 features: (1)Halogen-free; (2)TrenchFET® Gen III Power MOSFET; (3)100 % Rg Tested; (4)100 % UIS Tested.

Diagrams

SI7716ADN-T1-GE3 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SI7716ADN-T1-GE3
SI7716ADN-T1-GE3

Vishay/Siliconix

MOSFET 30V 16A 27.7W 13.5mohm @ 10V

Data Sheet

0-1: $0.60
1-10: $0.47
10-100: $0.43
100-250: $0.37
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
Si7703EDN
Si7703EDN

Other


Data Sheet

Negotiable 
SI7703EDN-T1
SI7703EDN-T1

Vishay/Siliconix

MOSFET 20V 6.3A 2.8W

Data Sheet

Negotiable 
SI7703EDN-T1-E3
SI7703EDN-T1-E3

Vishay/Siliconix

MOSFET 20V 6.3A 2.8W

Data Sheet

0-1580: $0.48
1580-3000: $0.39
3000-6000: $0.36
6000-12000: $0.35
SI7703EDN-T1-GE3
SI7703EDN-T1-GE3

Vishay/Siliconix

MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V

Data Sheet

0-1: $0.96
1-10: $0.76
10-100: $0.68
100-250: $0.59
Si7705DN
Si7705DN

Other


Data Sheet

Negotiable 
SI7705DN-T1
SI7705DN-T1

Vishay/Siliconix

MOSFET 20V 6.3A 2.8W

Data Sheet

Negotiable