TPIC2701N

monolithic power DMOS transistor array, 60 V, 0.5 A, 0.5 W, DIP

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PartNumber:: TPIC2701N

Brand:: Texas Instruments - TI | Pack: DIP | D/C: 10+

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Products Upload time: 2012-07-31

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Product Summary

The TPIC2701N is a monolithic power DMOS transistor array that consists of seven independent N-channel enhancement-mode DMOS transistors connected in a common-source configuration with open drains. The TPIC2701N is pin-for-pin functionally compatible with the Texas Instruments ULN2001A through ULN2004A. The TPIC2701N is characterized for operation over a temperature range of 0℃ to 125℃.The TPIC2701N is characterized for operation over the full military temperature range of –55℃ to 125℃.

Parametrics

TPIC2701N absolute maximum ratings: (1)Drain-source voltage, VDS: 60 V; (2)Gate-source voltage, VGS: ±20 V; (3)Clamp-drain voltage, VCD: 60 V; (4)Continuous source-drain diode current: 0.5 A; (5)Pulsed drain current, each output, ID: 3 A; (6)Pulsed clamp current, ICL: 3 A; (7)Continuous drain current, each output, all outputs on: 0.5 A; (8)Single-pulse avalanche energy, EAS: 22 mJ; (9)Operating virtual junction temperature range, TJ: -40℃ to 150℃; (10)Operating case temperature range, TC: -40℃ to 125℃; (11)Storage temperature range, Tstg: -65℃ to 150℃; (12)Lead temperature 1,6 mm (1/16 inch)from case for 10 seconds: N Package: 260℃; (13)Lead temperature 1,6 mm (1/16 inch)from case for 10 seconds: J Package: 300℃.

Features

TPIC2701N features: (1)Seven 0.5-A Independent Output Channels; (2)Integrated Clamp Diode With Each Output; (3)Low rDS(on)0.5 W Typical; (4)Output Voltage 60 V; (5)Pulsed Current 3 A Per Channel; (6)Avalanche Energy 22 mJ.