Product Summary

The AP4533GEM-HF is an n and p-channel enhancement mode power mosfet. The AP4533GEM-HF provides the designer with the best combination of fast switching, ruggedized device design,low on-resistance and costeffectiveness. The SO－8 package is widely preferred for commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Parametrics

AP4533GEM-HF absolute maximum ratings: (1)VDS Drain－Source Voltage: 30, －30 V; (2)VGS Gate－Source Voltage: +20, +20 V; (3)ID@TA=25℃ Continuous Drain Current3: 8.4, －6.0 A; (4)ID@TA=70℃ Continuous Drain Current3: 6.7, －4.8 A; (5)IDM Pulsed Drain Current1: 30, －30 A; (6)PD@TA=25℃ Total Power Dissipation: 2.0 W; (7)TSTG Storage Temperature Range: －55 to 150 ℃; (8)TJ Operating Junction Temperature Range: －55 to 150 ℃.

Features

AP4533GEM-HF features: (1)Simple Drive Requirement; (2)Lower Gate Charge; (3)Fast Switching Performance; (4)RoHS Compliant, Halogen-Free.

Diagrams

AP4533GEM-HF pin connection

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