(Hong Kong)
Product Summary
The AO3419L is a P-Channel Enhancement Mode Field Effect Transistor. The AO3419L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. The AO3419L is suitable for use as a load switch or in PWM applications. It is ESD protected. The AO3419L ( Green Product ) is offered in a lead-free package.
Parametrics
AO3419L absolute maximum ratings: (1)Drain-Source Voltage: -20V; (2)Continuous Drain: 3.5A; (3)Parameter Maximum Units: 15A; (4)Power Dissipation TA=25℃: 1.4W; (5)Junction and Storage Temperature Range: -55 to 150℃.
Features
AO3419L features: (1)VDS (V)= -20V; (2)ID = -3.5 A; (3)RDS(ON)< 75mΩ (VGS = -10V); (4)RDS(ON)< 95mΩ (VGS = -4.5V); (5)RDS(ON)< 145mΩ (VGS = -2.5V); (6)ESD Rating: 2000V HBM.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 AO3419L |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||||||
 |
AO3416 |
|
MOSFET N-CH 20V 6.5A SOT23 |
Data Sheet |
|
|
||||||||||||||||
|
AO3415AL |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||||||
|
AO3416L |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||||||
|
AO3418L |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||||||
|
AO3419L |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||||||
|
AO3418 |
|
MOSFET N-CH 30V 3.8A SOT23 |
Data Sheet |
|
|
||||||||||||||||
